Related papers: Intrinsic interface states in InAs-AlSb heterostru…
We construct a family of translationally invariant lattice models with a large number ($N$) of orbitals at every site coupled together via single electron tunneling. By tuning the relative strength of the electronic bandwidth and on-site…
We study the interplay between two nontrivial boundary effects: (1) the two dimensional ($2d$) edge states of three dimensional ($3d$) strongly interacting bosonic symmetry protected topological states, and (2) the boundary fluctuations of…
The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the {\Gamma} point, the layer-number dependence, and the distinct responses…
The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for…
We examine the bound-state and free-state contributions to the density of states in a three-dimensional electron gas with a two-dimensional interface with Rashba spin-orbit coupling. Confinement of electrons to the interface is achieved…
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…
We consider a model for the two-dimensional electron gas formed at the interface of oxide heterostructures, which includes a Rashba spin-orbit coupling proportional to the electric field perpendicular to the interface. Based on the standard…
Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or…
We present a microscopic study of the behavior of the order parameters near boundaries of a two-band superconducting material, described by the standard tight-binding Bardeen-Cooper-Schrieffer model. We find superconducting surface states.…
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…
Recently, higher-order topological insulators have been attracting extensive interest. Unlike the conventional topological insulators that demand bulk gap closings at transition points, the higher-order band topology can be changed without…
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures…
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…
We study in-plane lateral heterostructures of commensurate transition-metal dichalcogenides, such as MoS$_{2}$-WS$_{2}$ and MoSe$_{2}$-WSe$_{2}$, and find interfacial and edge states that are highly localized to these regions of the…
Semiconductor nanowires such as InAs and InSb are promising materials for studying Majorana zero-modes and demonstrating non-Abelian particle exchange relevant for topological quantum computing. While evidence for Majorana bound states in…
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of…
We obtain parameters for non-orthogonal and orthogonal TB models from two-atomic molecules for all combinations of elements of period 1 to 6 and group 3 to 18 of the periodic table. The TB bond parameters for 1711 homoatomic and…
We study proximity effects close to a boundary between s and s+- superconductors. Frustration, caused by interaction of the s-wave gap parameter with the opposite-sign gaps of s+- superconductor, leads to several anomalous features. In the…
We study the system of multi-body interacting bosons on a two dimensional optical lattice and analyze the formation of bound bosonic pairs in the context of the Bose-Hubbard model. Assuming a repulsive two-body interaction we obtain the…
We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H$_3$S in the {\em Im}$\bar{3}${\em m} structure, stable in the range of pressure $P = 180-220$ GPa. We show that the interatomic…