Related papers: Formation of Strain-Induced Quantum Dots in Gated …
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…
The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces…
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are…
Quantum dots are nanostructures made of semiconducting materials that are engineered to hold a small amount of electric charge (a few electrons) that is controlled by external gate and may hence be considered as tunable artificial atoms. A…
We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is…
An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond…
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The…
We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined…
Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter…
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…
We show that quantum dots and quantum wires are formed underneath metal electrodes deposited on a planar semiconductor heterostructure containing a quantum well. The confinement is due to the self-focusing mechanism of an electron wave…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
Semiconductivity and superconductivity are remarkable quantum phenomena that have immense impact on science and technology, and materials that can be tuned, usually by pressure or doping, to host both types of quantum states are of great…
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universal behavior is observed in atomistic strain simulations (in…