Related papers: Bipolar switching in an orthogonal spin transfer s…
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…
We analyze the statistical distribution of switching durations in spin-transfer switching induced by current steps, and discuss biasing strategies to enhance the reproducibility of switching durations. We use a macrospin approximation and…
We calculate the tunneling conductance \sigma between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field B_y. The parallel magnetic produces a relative shift of the…
Spin-polarized transport through a band-gap-matched ZnSe/Zn_{1-x}Mn_{x} Se/ZnSe/Zn_{1-x}Mn_{x}Se/ZnSe multilayer structure is investigated. The resonant transport is shown to occur at different energies for different spins owing to the…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
Vortices and antivortices are typical non uniform magnetization configurations that can be achieved in spin-torque oscillators with in-plane materials. Dynamics of a vortex-antivortex pair, namely vortex dipole, were predicted and already…
We report a mechanical effect in spin-valve nanopillars due to spin transfer. A polarized current carrying electron spins transfers torque to local magnetization and leads to a magnetic switching of free layer. Like classical Einstein-de…
We propose a time-reversal-even spin generation in second order of electric fields, which dominates the current induced spin polarization in a wide class of centrosymmetric nonmagnetic materials, and leads to a novel nonlinear spin-orbit…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
We model the operation and readout sensitivity of two current-modulated magnetoplasmonic devices which exploit spin Hall effect-like behavior as a function of their device and material parameters. In both devices, current pulses are applied…
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection.…
We reveal that for the single Anderson impurity localized between non-magnetic leads of the tunneling contact $"$magnetic$"$ state can be distinguished from the $"$paramagnetic$"$ one only by the analysis of the non-stationary system…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…
It is shown that magnetic bipolar transistors (MBT) can amplify currents even in the saturation regime, in which both the emitter-base and collector-base junctions are forward biased. The collector current and the current gain can change…
The mutual interaction between the different eigenmodes of a spin-torque oscillator can lead to a large variety of physical mechanisms from mode hopping to multi-mode generation, that usually reduce their performances as radio-frequency…
We proposed a novel multilayer structure to realize the deterministic switching of perpendicularly magnetized layers by spin orbital torque from the spin Hall effect through stray field engineering. In our design, a pinned magnetic layer is…
We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few…