Related papers: Undoped accumulation-mode Si/SiGe quantum dots
With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for…
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an…
The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires…
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…
We present a unified theory of quantum phase transitions for half-filled quantum dots (QDs) coupled to gapped host bands. We augment the bands by additional weakly coupled metallic lead which allows us to analyze the system by using…
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are…
We report measurements of the cross-correlation between current noise fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software…
We report direct detection of charge-tunneling between a quantum dot and a superconducting island through radio-frequency gate sensing. We are able to resolve spin-dependent quasiparticle tunneling as well as two-particle tunneling…
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative…
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by…
We propose a novel approach to explore the properties of a quantum dot in the presence of the spin-orbit interaction and in a tilted magnetic field. The spin-orbit coupling within the quantum dot manifest itself as anti-crossing of the…
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We report detailed transport measurements in a quantum dot in a spin-flip co-tunneling regime, and a quantitative comparison of the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…