Related papers: Undoped accumulation-mode Si/SiGe quantum dots

We study the in-gap states of the quantum dot hybridized to a conducting and superconducting electrode. The usual proximity effect suppresses electronic states over the entire subgap regime $|\omega| < \Delta$, where $\Delta$ denotes the…

We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V…

We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier…

We study entanglement of charge qubits in a vertical tunnel-coupled double quantum dot containing two interacting electrons. Exact diagonalization is used to compute the negativity characterizing entanglement. We find that entanglement can…

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…

Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…

We describe a novel mechanism for charge pumping through tunnel-coupled quantum dots in the regime of strong Coulomb blockade. The quantum state of an additional electron within the structure is steered by changing the tunneling couplings…

We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less…

Applications for noisy intermediate-scale quantum computing devices rely on the efficient entanglement of many qubits to reach a potential quantum advantage. Although entanglement is typically generated using two-qubit gates, direct control…

The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…

With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…

A novel method of coherent manipulation of the electron tunneling in quantum-dots is proposed, which utilizes the quantum interference in nonadiabatic double-crossing of the discrete energy levels. In this method, we need only a smoothly…

We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…

In order to employ solid state quantum dots as qubits, both a high degree of control over the confinement potential as well as sensitive charge detection are essential. We demonstrate that by combining local anodic oxidation with local…

We present a diagrammatic real-time approach to adiabatic pumping of electrons through interacting quantum dots. Performing a systematic perturbation expansion in the tunnel-coupling strength, we compute the charge pumped through a…

We demonstrate that when a quantum dot is embedded between the two reservoirs described by different statistical distribution functions, the reverse flow and amplification of heat can be realized by regulating the energy levels of the…

We investigate magneto-transport through a 1.6 \mu m wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-P\'erot interferometer,…

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of…

We propose atom interferometers based on quantum droplet (QD), which is also being reported as a superior platform for interferometry. The emphasis has been given to harmonic-oscillator (HO) or ring-shaped potentials. In the HO trap, a…

Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…