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Related papers: Gate-tunable Phase Transitions in 1T-TaS$_2$

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The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be…

Ionic liquids provide versatile pathways for controlling the structures and properties of quantum materials. Previous studies have reported electrostatic gating of nanometre-thick flakes leading to emergent superconductivity, insertion or…

Materials Science · Physics 2023-08-28 Fei Wang , Yang Zhang , Zhijie Wang , Haoxiong Zhang , Xi Wu , Changhua Bao , Jia Li , Pu Yu , Shuyun Zhou

The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be…

Applied Physics · Physics 2019-03-18 G. Liu , E. X. Zhang , C. D. Liang , M. A. Bloodgood , T. T. Salguero , D. M. Fleetwood , A. A. Balandin

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

Strongly Correlated Electrons · Physics 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu

The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated Mott insulator, alongside the robust yet rarely realized…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

Mesoscale and Nanoscale Physics · Physics 2012-05-17 Benoît Roche , Benoit Voisin , Xavier Jehl , Romain Wacquez , Marc Sanquer , Maud Vinet , Veeresh Deshpande , Bernard Previtali

Metal-to-insulator transitions (MIT) can be driven by a number of different mechanisms, each resulting in a different type of insulator -- Change in chemical potential can induce a transition from a metal to a band insulator; strong…

The two-dimensional organic conductor $\alpha$-(BEDT-TTF)$_2$I$_3$ undergoes a metal-insulator transition at $T_{\rm CO}=135$ K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties…

Strongly Correlated Electrons · Physics 2016-06-15 Tobias Peterseim , Tomislav Ivek , Dieter Schweitzer , Martin Dressel

When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena…

Superconductivity · Physics 2016-05-04 Davide Costanzo , Sanghyun Jo , Helmuth Berger , Alberto F. Morpurgo

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical…

Topological defects are ubiquitous from solid state physics to cosmology, where they drive phase transitions by proliferating as domain walls, monopoles or vortices. As quantum excitations, they often display fractional charge and anyonic…

Mesoscale and Nanoscale Physics · Physics 2012-03-27 R. Koushik , Matthias Baenninger , Vijay Narayan , Subroto Mukerjee , Michael Pepper , Ian Farrer , David A. Ritchie , Arindam Ghosh

Quantum states of strongly correlated electrons are of prime importance to understand exotic properties of condensed matter systems and the controllability over those states promises unique electronic devices such as a Mott memory. As a…

Materials Science · Physics 2017-07-12 Doohee Cho , Sangmo Cheon , Ki-Seok Kim , Sung-Hoon Lee , Yong-Heum Cho , Sang-Wook Cheong , Han Woong Yeom

Creating carrier reservoirs in layered compounds can effectively tune the carrier density, which often induces a variety of emergent properties. Based on solid-ion-conductor gating technique, we successfully induce superconductivity of 4.8…

Superconductivity · Physics 2019-06-12 Yanpeng Song , Xiaowei Liang , Jiangang Guo , Jun Deng , Guoying Gao , Xiaolong Chen

The transition metal dichalcogenide 1T-TaS$_2$ is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the…

Materials Science · Physics 2017-05-24 Xiaochen Zhu , Ang J. Li , G. R. Stewart , Arthur F. Hebard

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of…

Mesoscale and Nanoscale Physics · Physics 2016-10-31 Kyoichi Suzuki , Yuichi Harada , Koji Onomitsu , Koji Muraki

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moir\'e engineering. However,…

Mesoscale and Nanoscale Physics · Physics 2025-04-28 Qiao Chen , Chengyu Yan , Changshuai Lan , Qiyang Song , Yi Yan , Shun Wang

Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a…

Superconductivity · Physics 2024-09-24 Thibault Sohier , Marco Gibertini , Ivar Martin , Alberto F. Morpurgo

Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced…

Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material…

Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate…