The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.
@article{arxiv.1712.01354,
title = {Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices},
author = {G. Liu and E. X. Zhang and C. D. Liang and M. A. Bloodgood and T. T. Salguero and D. M. Fleetwood and A. A. Balandin},
journal= {arXiv preprint arXiv:1712.01354},
year = {2019}
}