Related papers: Gate-tunable Phase Transitions in 1T-TaS$_2$
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We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage…
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To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control…
1T-TaS$_2$ exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past towards…
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