Related papers: DMAPS: a fully depleted monolithic active pixel se…

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal,…

Future complementary metal oxide semiconductor (CMOS) scaling for advanced integrated circuit (IC) technologies may well depend on "More than Moore" (MtM) approaches using heterogeneous integration of semiconductor-based devices. In order…

We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an…

Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…

A novel Resistive Plate Chamber (RPC) was designed with Diamond-Like Carbon (DLC) electrodes and performance studies were carried out for 384$\,\mathrm{\mu m}$ gap configuration with a $2\,\mathrm{cm}\times2\,\mathrm{cm}$ prototype. The use…

We demonstrated a CMOS imaging system that adapts each pixel's exposure and sampling rate to capture high dynamic range (HDR) videos. The system consist of a custom designed image sensor with pixel-wise exposure configurability and a…

In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the…

In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO…

This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and…

In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low…

A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…

Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to track secondary charged particles produced by primary gamma-rays with high resolution. At the lower energies targeted…

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…

We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry…

The MiniCactus sensors are demonstrator sensors designed in LFoundry LF15A 150 nm technology, intended to study the performance of non amplified High Voltage High Resistivity CMOS sensors for measurement of time of arrival of charged…

Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…

The depleted CMOS sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Its capability of integrating the sensing diode into the CMOS wafer hosting the front-end…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…