This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.
@article{arxiv.1003.6071,
title = {Characterisation Studies of Silicon Photomultipliers},
author = {Patrick Eckert and Hans-Christian Schultz-Coulon and Wei Shen and Rainer Stamen and Alexander Tadday},
journal= {arXiv preprint arXiv:1003.6071},
year = {2015}
}
Comments
11 pages, 21 figures, submitted to Nuclear Instruments and Methods in Physics Research Section A