Related papers: Towards a Graphene-Based Quantum Impedance Standar…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially…
Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for…
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents…
We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima…
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect…
Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals,…
In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and…
We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex…
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high…
We discuss the quantum Hall effect on a single-layer graphene in the framework of noncommutative (NC) phase space. We find it induces a shift in the Hall resistivity. Furthermore, comparison with experimental data reveals an upper bound on…
Low-energy transport measurements in Quantum Hall systems have been argued to be governed by emergent modular symmetries whose predictions are robust against many of the detailed microscopic dynamics. We propose the recently-observed…
The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, but the behavior at higher frequencies has…
Measurements of fractional multiples of the {\nu}=2 plateau quantized Hall resistance (R_H {\approx} 12906 {\Omega}) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated…
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam…
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…