Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

Mirosław Woszczyna; Miriam Friedemann; Thorsten Dziomba; Thomas Weimann; Franz J. Ahlers

doi:10.1063/1.3608157

Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

Mesoscale and Nanoscale Physics 2011-07-19 v3

Authors: Mirosław Woszczyna , Miriam Friedemann , Thorsten Dziomba , Thomas Weimann , Franz J. Ahlers

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Abstract

We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.

Keywords

graphene p-n junction quantum Hall effect resistance standard ambipolar metrology

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@article{arxiv.1105.0838,
  title  = {Graphene p-n junction Arrays as Quantum-Hall Resistance Standards},
  author = {Mirosław Woszczyna and Miriam Friedemann and Thorsten Dziomba and Thomas Weimann and Franz J. Ahlers},
  journal= {arXiv preprint arXiv:1105.0838},
  year   = {2011}
}

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accepted for publication in Applied Physics Letters

Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

Abstract

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