English

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

Mesoscale and Nanoscale Physics 2012-03-05 v1

Abstract

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor (ν\nu) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.

Keywords

Cite

@article{arxiv.0912.2791,
  title  = {Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet},
  author = {Dong-Keun Ki and Seung-Geol Nam and Hu-Jong Lee and Barbaros Oezyilmaz},
  journal= {arXiv preprint arXiv:0912.2791},
  year   = {2012}
}

Comments

5 pages, 4 figures, will be published in PRB