The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.
@article{arxiv.2203.06489,
title = {Large-scale five- and seven-junction epitaxial graphene devices},
author = {Dinesh Patel and Martina Marzano and Chieh-I Liu and Heather M. Hill and Mattias Kruskopf and Hanbyul Jin and Jiuning Hu and David B. Newell and Chi-Te Liang and Randolph Elmquist and Albert F. Rigosi},
journal= {arXiv preprint arXiv:2203.06489},
year = {2022}
}