We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
Cite
@article{arxiv.2201.03621,
title = {Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions},
author = {Jiuning Hu and Albert F. Rigosi and Mattias Kruskopf and Yanfei Yang and Bi-Yi Wu and Jifa Tian and Alireza R. Panna and Hsin-Yen Lee and Shamith U. Payagala and George R. Jones and Marlin E. Kraft and Dean G. Jarrett and Kenji Watanabe and Takashi Taniguchi and Randolph E. Elmquist and David B. Newell},
journal= {arXiv preprint arXiv:2201.03621},
year = {2022}
}