In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology.
@article{arxiv.1303.3749,
title = {Quantum resistance metrology using graphene},
author = {T. J. B. M. Janssen and A. Tzalenchuk and S. Lara-Avila and S. Kubatkin and V. I. Fal'ko},
journal= {arXiv preprint arXiv:1303.3749},
year = {2013}
}
Comments
arXiv admin note: substantial text overlap with arXiv:1202.2985