Related papers: Towards a Graphene-Based Quantum Impedance Standar…
Extensive fractional quantum Hall effect (FQHE) has been observed in graphene-based materials. Some of the observed fractions are anomalous in that FQHE has not been established at these fractions in conventional GaAs systems. One such…
Recent experiments on rhombohedral pentalayer graphene flakes with a substrate induced moir\'e potential have identified both Chern insulators and fractional Quantum Hall states in the absence of an applied magnetic field. Surprisingly,…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
Graphene membranes suspended off electric contacts or other rigid supports are prone to elastic strain, which is concentrated at the edges and corners of the samples. Such a strain leads to an algebraically varying effective magnetic field…
We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…
The in-plane resistivity, Hall resistivity and magnetization of graphite were investigated in pulsed magnetic fields applied along the \textit{c}-axis. The Hall resistivity approaches zero at around 53 T where the in-plane and out-of-plane…
We study the quantum Hall effect (QHE) in graphene based on the current injection model. In our model, the presence of disorder, the edge-state picture, extended states and localized states, which are believed to be indispensable…
The quantum Hall and longitudinal resistances in multi-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurements, the transverse contacts are assumed to be located at p-n…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
Electron interferometry with quantum Hall edge channels holds promise for probing and harnessing exotic exchange statistics of non-Abelian anyons. In semiconductor heterostructures, however, quantum Hall interferometry has proven…
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external…
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for…
We review the basic aspects of electrons in graphene (two-dimensional graphite) exposed to a strong perpendicular magnetic field. One of its most salient features is the relativistic quantum Hall effect the observation of which has been the…
We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
The small mass and atomic-scale thickness of graphene membranes make them highly suitable for nanoelectromechanical devices such as e.g. mass sensors, high frequency resonators or memory elements. Although only atomically thick, many of the…
We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…
Fabrication of devices made by isolated Graphene or Graphene-like single layers (such as h-BN) has opened up possibility of examining highly correlated states of electron systems in parts of their phase diagram that is impossible to access…
Recently unusual integer quantum Hall effect was observed in graphene in which the Hall conductivity is quantized as $\sigma_{xy}=(\pm 2, \pm 6, \pm 10, >...) \times \frac{e^2}{h}$, where $e$ is the electron charge and $h$ is the Planck…