We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one dc, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B ≤ 1.4T) and simultaneously realtively high teperatures (liquid helium, T ≥ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.
@article{arxiv.1810.07449,
title = {Perspectives of HgTe Topological Insulators for Quantum Hall Metrology},
author = {Ivan Yahniuk and Sergey S. Krishtopenko and Grzegorz Grabecki and Benoit Jouault and Christophe Consejo and Wilfried Desrat and Magdalena Majewicz and Alexander M. Kadykov and Kirill E. Spirin and Vladimir I. Gavrilenko and Nikolay N. Mikhailov and Sergey A. Dvoretsky and Dmytro B. But and Frederic Teppe and Jerzy Wróbel and Grzegorz Cywiński and 1 Sławomir Kret and Tomasz Dietl and Wojciech Knap},
journal= {arXiv preprint arXiv:1810.07449},
year = {2019}
}