The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier(CdTe) and well-region(HgTe) are altered by replacing them with the alloy CdxHg1−xTe of various stoichiometries, the critical width can be changed.The critical quantum well width is shown to depend on temperature, applied stress, growth directions and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.
@article{arxiv.1302.5716,
title = {Design principles for HgTe based topological insulator devices},
author = {Parijat Sengupta and Tillmann Kubis and Yaohua Tan and Michael Povolotskyi and Gerhard Klimeck},
journal= {arXiv preprint arXiv:1302.5716},
year = {2015}
}