Related papers: An accurate single-electron pump based on a highly…

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…

The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non…

We study the impact of off-resonant tunneling and coherences on the electron pumping through quantum dots. Thereby, we focus on two electron-pump setups where lowest-order tunneling processes are suppressed and the pump is exclusively…

We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…

In a quantum charge pump, the periodic variation of two parameters that affect the phase of the electronic wavefunction causes the flow of a direct current. The operating mechanism of a quantum pump is based on quantum interference, the…

We demonstrate the operation of a quantum spin pump based on cyclic radio-frequency excitation of a GaAs quantum dot, including the ability to pump pure spin without pumping charge. The device takes advantage of bidirectional mesoscopic…

Parametric electron pump through superconductor-carbon-nanotube based molecular devices was investigated. It is found that a dc current, which is assisted by resonant Andreev reflection, can be pumped out from such molecular device by a…

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…

We propose a nanoscale heat engine that utilizes the physics of resonant tunneling in quantum dots in order to transfer electrons only at specific energies. The nanoengine converts heat into electrical current in a multiterminal geometry…

We propose a mechanism by which an open quantum dot driven by two ac (radio frequency) gate voltages in the presence of a moderate in-plane magnetic field generates a spin polarized, phase coherent dc current. The idea combines adiabatic,…

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…

Photonic qubits are key enablers for quantum-information processing deployable across a distributed quantum network. An on-demand and truly scalable source of indistinguishable single photons is the essential component enabling…

We investigate the parametric pumping of a hybrid structure consisting of a normal quantum dot, a normal lead and a superconducting lead. Using the time dependent scattering matrix theory, we have derived a general expression for the pumped…

We introduce a new functional nanoscale device, a single-electron heat diode, consisting of two quantum dots or metallic islands coupled to electronic reservoirs by tunnel contacts. Electron transport through the system is forbidden but the…

Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device…

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…

We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus…

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…