Related papers: An accurate single-electron pump based on a highly…
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
We study theoretically current quantization in the charge turnstile based on the hybrid (SINIS or NISIN) SET transistor. The quantization accuracy is limited by either Andreev reflection or by Cooper pair - electron cotunneling. The rates…
We fabricated and tested the single electron R-pump, i.e. a three-junction Al circuit with on-chip Cr resistors. We show that due to the presence of the resistors (R > h/e^2 = 25.8 kOhm), the accuracy of electron transfer in the R-pump can…
In the adiabatic and weak-modulation quantum pump, net electron flow is driven from one reservoir to the other by absorbing or emitting an energy quantum $\hbar \omega $ from or to the reservoirs. In our approach, high-order dependence of…
We investigate spin and charge current through a quantum dot pumped by a time-varying magnetic field. Using the density matrix method, quantum rate equations for the electronic occupation numbers in the quantum dot are obtained and solved…
Dynamic quantum dots can be formed by time-dependent electrostatic potentials in nanoelectronic devices, such as gate- or surface-acoustic-wave-driven electron pumps. Ability to control the number of captured electrons with high precision…
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their…
We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
The basis of synchronous manipulation of individual electrons in solid-state devices was laid by the rise of single-electronics about two decades ago. Ultra-small structures in a low temperature environment form an ideal domain of…
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays…
The conversion and interaction between quantum signals at a single-photon level are essential for scalable quantum photonic information technology. Using a fully-optimized, periodically-poled lithium niobate microring, we demonstrate…
By deriving analytical formulae for the quantization accuracy of the acoustoelectric current, we reveal that: 1) the flatness of the current plateau for the typical present devices has reached the theoretical limit of about 100ppm over a…
We describe a single-level quantum dot in contact with two leads as a nanoscale finite-time thermodynamic machine. The dot is driven by an external stochastic force that switches its energy between two values. In the isothermal regime, it…
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
The double quantum dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device,…