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Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 T. Ota , M. Stopa , M. Rontani , T. Hatano , K. Yamada , S. Tarucha , H. Z. Song , Y. Nakata , T. Miyazawa , T. Ohshima , N. Yokoyama

We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 A. R. Champagne , A. N. Pasupathy , D. C. Ralph

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Paul Stokes , Saiful I. Khondaker

One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid…

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Kamil Walczak

A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Boris Grbic , Renaud Leturcq , Klaus Ensslin , Dirk Reuter , Andreas D. Wieck

We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…

Condensed Matter · Physics 2007-05-23 K. Flensberg , L. W. Molenkamp

The thermoelectric properties of a semiconduct quantum dot chain (SQDC) connected to metallic electrodes are theoretically investigated in the Coulomb blockade regime. An extended Hubbard model is employed to simulate the SQDC system…

Mesoscale and Nanoscale Physics · Physics 2013-01-11 David M. -T. Kuo , Yia-Chung Chang

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 B. J. Villis , A. O. Orlov , X. Jehl , G. L. Snider , P. Fay , M. Sanquer

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…

Mesoscale and Nanoscale Physics · Physics 2011-04-08 Mingyun Yuan , Feng Pan , Zhen Yang , T. J. Gilheart , Fei Chen , D. E. Savage , M. G. Lagally , M. A. Eriksson , A. J. Rimberg

We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 H. W. Liu , T. Fujisawa , H. Inokawa , Y. Ono , A. Fujiwara , Y. Hirayama

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…

Mesoscale and Nanoscale Physics · Physics 2015-06-15 R. Li , F. E. Hudson , A. S. Dzurak , A. R. Hamilton

Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Valentin V. Pogosov , Eugene V. Vasyutin

We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…

Mesoscale and Nanoscale Physics · Physics 2008-03-25 F. E. Hudson , A. J. Ferguson , C. C. Escott , A. S. Dzurak , R. G. Clark , D. N. Jamieson , C. Yang

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

A room temperature single-electron transistor based on the single cluster molecule has been demonstrated for the first time. Scanning tunneling microscope tip was used to study the transport via single carboran cluster molecule…

We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 T. Nord , L. Y. Gorelik , R. I. Shekhter , M. Jonson

Quantum--Mechanical methods that are both computationally fast and accurate are not yet available for electronic excitations having charge transfer character. In this work, we present a significant step forward towards this goal for those…

Chemical Physics · Physics 2015-06-12 Michele Pavanello , Troy Van Voorhis , Lucas Visscher , Johannes Neugebauer

The present paper gives an elaborate theoretical description of a new molecular charge transport mechanism applying to a single molecule trapped between two macroscopic electrodes in a solid state device. It is shown by a Hubbard type model…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Per Hedegard , Thomas Bjornholm

A dielectric-modulated double gate bilayer electrodes organic thin-film transistor (DMDGBE-OTFT) based sensor is proposed for label-free biomolecule detection. The double gate of DMDGBE-OTFT is used for creating two symmetrical gates…

Instrumentation and Detectors · Physics 2022-05-31 Sushil Kumar Jain , Amit M. Joshi