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A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…

Materials Science · Physics 2008-12-02 Li-Na Zhao , Xue-Feng Wang , Zhen-Hua Yao , Zhu-Feng Hou , Marcus Yee , Xing Zhou , Shi-Huan Lin , Teck-Seng Lee

Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. C. Johnson , J. R. Petta , C. M. Marcus , M. P. Hanson , A. C. Gossard

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 J. J. Henderson , C. M. Ramsey , E. del Barco , A. Mishra , G. Christou

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

Mesoscale and Nanoscale Physics · Physics 2020-04-22 Luca Banszerus , Samuel Möller , Eike Icking , Kenji Watanabe , Takashi Taniguchi , Christian Volk , Christoph Stampfer

We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…

Mesoscale and Nanoscale Physics · Physics 2015-05-20 L. J. Wang , H. O. Li , Z. Su , T. Tu , G. Cao , C. Zhou , X. J. Hao , G. C. Guo , G. P. Guo

Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Richard Berkovits , Felix von Oppen , Yuval Gefen

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…

Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in…

Mesoscale and Nanoscale Physics · Physics 2021-03-22 Rahul Tripathi , Pritam Bhattacharyya , Sukanta Nandi , Alok Shukla , Abha Misra

The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…

Mesoscale and Nanoscale Physics · Physics 2011-09-28 D. Hou , J. H. Wei

Low-temperature transport spectroscopy measurements on a quantum dot lithographically defined in a multiwall $\mathrm{MoS}_2$ nanotube are demonstrated. At $T=300\,\mathrm{mK}$, clear Coulomb blockade is observed, with charging energies in…

Mesoscale and Nanoscale Physics · Physics 2019-11-12 Simon Reinhardt , Luka Pirker , Christian Bäuml , Maja Remškar , Andreas K. Hüttel

We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…

Strongly Correlated Electrons · Physics 2012-08-27 J. H. Miller, , G. Cardenas , A. Garcia , W. More , A. W. Beckwith , J. P. McCarten

We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…

Mesoscale and Nanoscale Physics · Physics 2020-05-27 S. Davari , J. Stacy , A. M. Mercado , J. D. Tull , R. Basnet , K. Pandey , K. Watanabe , T. Taniguchi , J. Hu , H. O. H. Churchill

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open…

We calculate the charge susceptibility and the linear and differential conductances of a double quantum dot coupled to two metallic reservoirs both at equilibrium and when the system is driven away from equilibrium. This work is motivated…

Mesoscale and Nanoscale Physics · Physics 2018-10-16 V. Talbo , M. Lavagna , T. Q. Duong , A. Crépieux

Quantum transport through single molecules is very sensitive to the strength of the molecule-electrode contact. When a molecular junction weakly coupled to external electrodes, charging effects do play an important role (Coulomb blockade…

Mesoscale and Nanoscale Physics · Physics 2007-10-03 Bo Song

Images of a single-electron quantum dot were obtained in the Coulomb blockade regime at liquid He temperatures using a cooled scanning probe microscope (SPM). The charged SPM tip shifts the lowest energy level in the dot and creates a ring…

We study steady state transport through a double quantum dot array using the equation-of-motion approach to the nonequilibrium Green functions formalism. This popular technique relies on uncontrolled approximations to obtain a closure for a…

Strongly Correlated Electrons · Physics 2013-06-26 Tal J. Levy , Eran Rabani

We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 R. K. Puddy , L. W Smith , H. Al-Taie , C. H. Chong , I. Farrer , J. P. Griffiths , D. A. Ritchie , M. J. Kelly , M. Pepper , C. G. Smith