Related papers: Static Non-linearity in Graphene Field Effect Tran…
Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear…
We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…
Field effect transistors embedded into a depleted silicon bulk (DEPFETs) can be used as the first amplifying element for the detection of small signal charges deposited in the bulk by ionizing particles, X-ray photons or visible light. Very…
In this letter, we study the stability of the domain model for lithium intercalated graphite in stages III and II by means of Density Functional Theory and Kinetic Lattice Monte Carlo simulations. We find that the domain model is either…
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate.…
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs.…
A density-matrix formalism within the length gauge is developed for the purpose of calculating the nonlinear response of intrinsic bilayer graphene at terahertz frequencies. Employing a tight-binding model, we find that interplay between…
We compute from first principles the infrared dispersion of the nonlinear susceptibility $\chi^{(2)}$ in zincblende semiconductors. At terahertz frequencies the nonlinear susceptibility depends not only on the purely electronic response…
Let F be a finite extension of Qp and G be GL(2,F). When V is the tensor product of three infinite dimensional, irreducible, admissible representations of G, the space of G-invariant linear forms has dimension 0 or 1. When a non-zero linear…
Using perturbation expansion of Maxwell equations, the amplitude equation is derived for nonlinear TM and TE surface plasmon waves supported by graphene. The equation describes interplay between in-plane beam diffraction and nonlinerity due…
The stability of non-linear Integrable Optics Test Accelerator (IOTA) model was tested. The area of the stable region in transverse coordinates and the maximum attainable tune spread were found as a function of non-linear lens strength.…
In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the…
Multi-terminal transport setups allow to realize more complex measurements and functionalities (e.g., transistors) of nanoscale systems than the simple two-terminal arrangement. Here the steady-state density functional formalism (i-DFT) for…
For the nonlinear second order Lienard-type equations with time-varying delays $$ \ddot{x}(t)+\sum_{k=1}^m f_k(t,x(t),\dot{x}(g_k(t)))+\sum_{k=1}^l s_k(t,x(h_k(t)))=0, $$ global asymptotic stability conditions are obtained. The results are…
This paper presents a research devoted to the study of instability phenomena in non-linear model with a constant brake friction coefficient. This paper outlines the stability analysis and a procedure to reduce and simplify the non-linear…
High-harmonic spectroscopy in solids gives insight into the inner workings of solids, such as reconstructing band structures or probing the topological phase of materials. High-harmonic generation (HHG) is a highly non-linear phenomena and…
One-dimensional organic heterostructures consisting of contiguous lines of CF3- and OCH3-substituted styrene molecules on silicon are studied by scanning tunneling microscopy and ab initio simulation. Dipole fields of OCH3-styrene molecules…
We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier…
Linearity is an important and frequently sought property in electronics and instrumentation. Here, we report a method capable of, given a transfer function, identifying the respective most linear region of operation with a fixed width. This…
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate…