Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.
@article{arxiv.1007.3924,
title = {Rectification in three-terminal graphene junctions},
author = {A. Jacobsen and I. Shorubalko and L. Maag and U. Sennhauser and K. Ensslin},
journal= {arXiv preprint arXiv:1007.3924},
year = {2010}
}