Related papers: Static Non-linearity in Graphene Field Effect Tran…
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT…
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that a finite-temperature second order phase transition occurs…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that…
We study the linear- and nonlinear-optical lineshapes of metal nanoparticles (theory) and metallic photonic crystal slabs (experiment and theory). For metal nanoparticle ensembles, we show analytically and numerically that femtosecond…
Electrostatic gating offers elegant ways to simultaneously strain and dope atomically thin membranes. Here, we report on a detailed \textit{in situ} Raman scattering study on graphene, suspended over a Si/SiO$_2$ substrate. In such a…
We carry out a comprehensive theoretical and experimental study of charge injection in Poly(3-hexylthiophene) (P3HT) to determine the most likely scenario for metal-insulator transition in this system. We calculate the optical absorption…
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is…
We have investigated the non-quasi-static (NQS) effects in graphene field-effect transistors (GFETs), which are relevant for GFET operation at high frequencies as a result of significant carrier inertia. A small-signal NQS model is derived…
Context. Prominence oscillations have been mostly detected using Doppler velocity, although there are also claimed detections by means of periodic variations in half-width or line intensity. However, scarce observational evidence exists…
The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…
We theoretically discuss the mechanism for the peculiar nonlinear conduction in quasi-two-dimensional organic conductors \theta-(BEDT-TTF)2X [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene] through the melting of stripe-type charge order.…
Graphene was shown to have strongly nonlinear electrodynamic properties. In particular, being irradiated by an electromagnetic wave with the frequency $\omega$, it can efficiently generate higher frequency harmonics. Here we predict that in…
A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective…
In this contribution we aim to study the stability boundaries of solutions at equilibria for a second-order oscillator networks with SN-symmetry, we look for non-degenerate Hopf bifurcations as the time-delay between nodes increases. The…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
We compute the magnetization of graphene in a magnetic field, taking into account for generality the possibility of a mass gap. We concentrate on the physical regime where quantum oscillations are not observed due to the effect of the…
We investigate the nonlinear optical susceptibilities of Mott insulators with the dynamical mean field approximation. The two-photon absorption (TPA) and the third-harmonic generation (THG) spectra are calculated, and the classification by…