Related papers: Transition between 1D and 0D spin transport studie…
We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…
We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
Dynamics of charge-density fluctuations in a system of two tunnel-coupled wires contains two diffusion modes with dispersion iw=Dq^2 and iw =Dq^2+2/tau_t, where D is the diffusion coefficient and tau_t is the tunneling time between the…
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…
Valley-spin coupling in transition-metal dichalcogenides (TMDs) can result in unusual spin transport behaviors under an external magnetic field. Nonlocal resistance measured from 2D materials such as TMDs via electrical Hanle experiments…
The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle…
We suggest a series of transport experiments on spin precession in quantum dots coupled to one or two ferromagnetic leads. Dot spin states are created by spin injection and analyzed via the linear conductance through the dot, while an…
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric…
Valley asymmetry of the electron spectrum in transition metal dichalcogenides (TMDs) originates from the spin-orbit coupling. Presence of spin-orbit fields of opposite signs for electrons in K and K' valleys in combination with possibility…
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long…
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…