Related papers: Mobility versus quality in 2D semiconductor struct…
Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…
The transport properties of disordered systems are known to depend critically on dimensionality. We study the diffusion coefficient of a quantum particle confined to a lattice on the surface of a tube, where it scales between the 1D and 2D…
We are honored to dedicate this article to Emmanuel Rashba on the occasion of his 95 birthday. In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap,…
We study the effect of a resonant frequency disorder on the eigenstates and the transport of magnetic energy in a two-dimensional (square) array of split-ring resonators (SRRs). In the absence of disorder, we find the dispersion relation of…
Scattering by charged impurities is known to mainly determine transport properties of electrons in modern quantum materials, but it remains poorly studied for materials with Mexican hat dispersion. Due to such nontrivial features as a…
Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
Features of a topological phase, and edge states in particular, may be obscured by overlapping in energy with a trivial conduction band. The topological nature of such a conductor, however, is revealed in its transport properties,…
We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…
In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low…
We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO$_2$ by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show…
Motivated by evidence of local electron-electron attraction in experiments on disordered insulating films, we propose a new two-component Coulomb glass model that combines strong disorder and long-range Coulomb repulsion with the additional…
More physics at the boundaries of a topological lattice remains to be explored for future applications of topological edge states. This work investigates the stability of topological edge states in the presence of a moving impurity. By…
We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moir\'e multilayer transition metal dichalcogenides (mTMD) using Coulomb disorder in the environment as the underlying mechanism.…
The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional…
We study the local density of states around potential scatterers in d-wave superconductors, and show that quantum interference between impurity states is not negligible for experimentally relevant impurity concentrations. The two impurity…
Atomically thin (two-dimensional, 2D) semiconductors have shown great potential as the fundamental building blocks for next-generation electronics. However, all the 2D semiconductors that have been experimentally made so far have…
We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a…
Electrons (or holes) confined in 2D semiconductor layers have served as model systems for studying disorder and interaction effects for almost 50 years. In particular, strong disorder drives the metallic 2D carriers into a strongly…
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS$_2$) transistors on bulged silicon nitride (SiN$_x$) substrates that exhibit…