Related papers: Mobility versus quality in 2D semiconductor struct…
We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality…
Considering scattering by unintentional background charged impurities and by charged dopants in the modulation doping layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
We propose a technique for achieving large improvements in carrier mobilities in 2- and 1-dimensional semiconductor nanostructures by modifying their dielectric environments. We show that by coating the nanostructures with high-$\kappa$…
We analyze how the range of disorder affects the localization properties of quasiparticles in a two-dimensional d-wave superconductor within the standard non-linear sigma-model approach to disordered systems. We show that for purely…
While standard scaling arguments show that a system of non-interacting electrons in two dimensions and in the presence of uncorrelated disorder is insulating, in this work we discuss the case where inter-impurity correlations are included.…
We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the…
Effect of static charges on charge carrier transport in disordered organic materials is considered. Long range nature of Coulomb interaction requires to take into consideration a finite thickness of the transport layer. Presence of…
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…
A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g.,…
We study the effect of unscreened charged impurities on periodic systems. We show that the long wavelength component of the disorder becomes long ranged and dominates static correlation functions. On the other hand, because of the…
We comprehend the role of imperfections in materials consisting of interacting particles, arising from different origins on their universal features. Specifically, we report the static and dynamic responses in a cluster of Coulomb…
A novel feature for control of carrier mobility is explored in an order-disorder separated double quantum ring, where the two rings thread different magnetic fluxes. Here we use simple tight-binding formulation to describe the system. In…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…
Atomic disorder is a common limiting factor for the low-temperature mobility in monolayer transition-metal dichalcogenides (TMDs; MX2). Here, we study the effect of often occurring atomic vacancies on carrier scattering and transport in p-…
Commensurability oscillations in the magnetoresistivity of a two-dimensional electron gas in a two-dimensional lateral superlattice are studied in the framework of quasiclassical transport theory. It is assumed that the impurity scattering…
We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…
The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on…