We predict and demonstrate that a disorder induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality point. Effective medium calculations show that for charged impurity disorder, the low-field MR is a universal function of the ratio of carrier density to fluctuations in carrier density, a power-law when this ratio is large, in excellent agreement with experiment. The MR is generic and should occur in other materials with large carrier density inhomogeneity.
@article{arxiv.1401.5094,
title = {Disorder induced magnetoresistance in a two dimensional electron system},
author = {Jinglei Ping and Indra Yudhistira and Navneeth Ramakrishnan and Sungjae Cho and Shaffique Adam and Michael S. Fuhrer},
journal= {arXiv preprint arXiv:1401.5094},
year = {2014}
}