Clustered impurities and carrier transport in supported graphene
Mesoscale and Nanoscale Physics
2014-05-21 v1
Abstract
We investigate the effects of charged impurity distributions and carrier-carrier interactions on electronic transport in graphene on SiO by employing a self-consistent coupled simulation of carrier transport and electrodynamics. We show that impurity clusters of characteristic width 40--50 nm generate electron--hole puddles of experimentally observed sizes. In the conductivity versus carrier density dependence, the residual conductivity and the linear-region slope are determined by the impurity distribution, and the measured slope can be used to estimate the impurity density in experiment. Furthermore, we show that the high-density sublinearity in the conductivity stems from carrier-carrier interactions.
Keywords
Cite
@article{arxiv.1405.4938,
title = {Clustered impurities and carrier transport in supported graphene},
author = {N. Sule and S. C. Hagness and I. Knezevic},
journal= {arXiv preprint arXiv:1405.4938},
year = {2014}
}