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Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge…

Materials Science · Physics 2009-11-10 Roswitha Zeis , Theo Siegrist , Christian Kloc

We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance…

Mesoscale and Nanoscale Physics · Physics 2016-08-31 M. Krueger , M. R. Buitelaar , T. Nussbaumer , C. Schoenenberger , L. Forro

Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers…

Materials Science · Physics 2019-12-17 Haijing Zhang , Christophe Berthod , Helmuth Berger , Thierry Giamarchi , Alberto F. Morpurgo

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters…

We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…

Condensed Matter · Physics 2009-10-30 F. G. Pikus , K. K. Likharev

Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and…

Materials Science · Physics 2010-05-02 Xuebin Li , Xiaosong Wu , Mike Sprinkle , Fan Ming , Ming Ruan , Yike Hu , Claire Berger , Walt A. de Heer

We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain…

Materials Science · Physics 2009-11-13 Paul Stokes , Eliot Silbar , Yashira M. Zayas , Saiful I. Khondaker

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in…

Materials Science · Physics 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Kohei Fujiwara , Keiji Ueno , Toshihiro Shimada , Koichiro Saiki

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…

Carbon Nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nano-scaled transistors. This paper aims at analyzing a trade-off between device performance and device size of CNT…

Applied Physics · Physics 2018-11-20 Imtiaj Khan , Ovishek Morshed , Sharif Mohammad Mominuzzaman

We study theoretically the charge separation in a planar array of semiconducting nanotubes (NTs) of length, 2h, placed in external electric field, F, parallel to their axes. By employing the conformal mapping, we find analytically the exact…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 T. A. Sedrakyan , E. G. Mishchenko , M. E. Raikh

A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…

Materials Science · Physics 2008-12-02 Li-Na Zhao , Xue-Feng Wang , Zhen-Hua Yao , Zhu-Feng Hou , Marcus Yee , Xing Zhou , Shi-Huan Lin , Teck-Seng Lee

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…

Superconductivity · Physics 2009-11-10 S. Wehrli , C. Helm

The effect of electric field, applied on systems in the nanoscale regime has attracted a lot of research in recent times. We highlight some of the recent results in the field of single molecule electronics and then move on to focus on some…

Materials Science · Physics 2008-10-11 S. Lakshmi , Sudipta Dutta , Swapan K. Pati

We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the…

Mesoscale and Nanoscale Physics · Physics 2009-10-30 D. C. Ralph , C. T. Black , M. Tinkham

The spin properties of charge carriers confined in CuCl semiconductor nanocrystals (NCs) of different sizes (radius from 1.8 nm up to 28 nm) crystallized in a glass matrix are studied experimentally and theoretically. By means of…

We investigate a nanoscale dielectric capacitor model consisting of two-dimensional, hexagonal h-BN layers placed between two commensurate and metallic graphene layers using self-consistent field density functional theory. The separation of…

Mesoscale and Nanoscale Physics · Physics 2013-07-30 V. Ongun Özçelik , S. Ciraci

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

Mesoscale and Nanoscale Physics · Physics 2016-02-19 N. C. S. Vieira , J. Borme , G. Machado , F. Cerqueira , P. P. Freitas , V. Zucolotto , N. M. R. Peres , P. Alpuim

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…

Mesoscale and Nanoscale Physics · Physics 2020-02-12 A. Kringhøj , T. W. Larsen , B. van Heck , D. Sabonis , O. Erlandsson , I. Petkovic , D. I. Pikulin , P. Krogstrup , K. D. Petersson , C. M. Marcus

The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…

Mesoscale and Nanoscale Physics · Physics 2024-02-06 P. Xu , H. Luo