Related papers: Theory of a field effect transistor based on semic…
Supercapacitors store energy via the formation of an electric double layer, which generates a strong electric field at the electrode-electrolyte interface. Unlike conventional metallic electrodes, graphene-derived materials suffer from a…
The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation…
We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of…
A 1 $\mu$m long, field emitting, (5,5) single-walled, carbon nanotube (SWCNT) closed with a fullerene cap, and a similar open nanotube with hydrogen-atom termination, have been simulated using the MNDO (Modified Neglect of Diatomic Overlap)…
We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show…
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we…
Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…
Weyl semimetals are characterized by their bulk Weyl points -- conical band touching points that carry a topological monopole charge -- and Fermi arc states that span between the Weyl points on the surface of the material. Recently,…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…
We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate…
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron…
The effect of screening of the coulomb interaction between two layers of two-dimensional electrons, such as in graphene, by a highly doped semiconducting substrate is investigated. We employ the random-phase approximation to calculate the…
High frequency conductivity of hot electrons in an undoped single walled achiral carbon nanotubes (CNTs) under the influence of ac-dc driven fields is considered. We investigated semiclassically by solving the Boltzmann's transport equation…
Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…
We theoretically analyse the possibility to electrostatically confine electrons in circular quantum dot arrays, impressed on contacted graphene nanoribbons by top gates. Utilising exact numerical techniques, we compute the scattering…
We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by…