Related papers: Boosting the voltage gain of graphene FETs through…
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is…
We theoretically investigate a near-quantum-limited parametric amplifier based on the nonlinear dynamics of quasiparticles flowing through a superconducting-insulator-superconducting junction. Photon-assisted tunneling, resulting from the…
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in…
We study theoretically the feasibility of amplification and generation of terahertz radiation in dc-ac-driven semiconductor superlattices in the absence of electric domains. We find that if in addition to dc bias a strong THz pump field is…
High level of dissipation in normal metals makes challenging development of active and passive plasmonic devices. One possible solution to this problem is to use alternative materials. Graphene is a good candidate for plasmonics in near…
Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain…
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current…
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT…
We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier.…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…
Spectacular advances in heterodyne astronomy with both the Herschel Space Observatory and Stratospheric Observatory for Far Infrared Astronomy (SOFIA) have been largely due to breakthroughs in detector technology. In order to exploit the…
Graphene devices are known to have the potential to operate THz signals. In particular, graphene field-effect transistors have been proposed as devices to host plasmonic instabilities in the THz realm; for instance, Dyakonov-Shur…
In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under this condition, the electronic system can efficiently amplify acoustic phonons, leading to the…
A voltage biased Zener diode always exhibit positive differential resistance, thus cannot be used as an element to provide amplification of a signal. We show how to induce negative differential resistance in the reverse bias regime of a 12V…
Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a…
Optical communication systems, operating in C-band, are reaching their theoretically achievable capacity limits. An attractive and economically viable solution to satisfy the future data rate demands is to employ the transmission across the…
We study theoretically a multi-frequency response of electrons in confined graphene subject to dc-ac driven fields. We explore the possibility for using graphene nanoribbons (GNRs) to generate and amplify terahertz (THz) radiations in…
We show that charge carrier transport in graphene exhibit sharp resonances in the presence of spatially and temporarily modulated scattering. Resonances occur when the period of an applied a-c field corresponds to the time taken by…
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…