Resonant high harmonic generation in a ballistic graphene transistor with an AC driven gate
Abstract
We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier. Photon-assisted tunneling results in excitation of quasibound states at the barrier. Under resonance condition, the excitation of the quasibound states leads to promotion of higher-order sidebands and enhanced higher harmonics of the source-drain conductance. The resonances in the main transmission channel are of the Fano form, while they are of the Breit-Wigner form for sidebands. We discuss the possibility of utilizing the resonances in prospective ballistic high-frequency devices, in particular frequency multipliers.
Cite
@article{arxiv.1506.03341,
title = {Resonant high harmonic generation in a ballistic graphene transistor with an AC driven gate},
author = {Y. Korniyenko and O. Shevtsov and T. Lofwander},
journal= {arXiv preprint arXiv:1506.03341},
year = {2016}
}
Comments
14 pages, 5 figures