Related papers: Boosting the voltage gain of graphene FETs through…
The unique terahertz properties of graphene has been identified for novel optoelectronic applications. In a graphene sample with bias voltage added, there is an enhanced absorption in the far infrared region and a diminished absorption in…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…
Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D)…
We report the amplification of 250~GHz pulses as short as 260~ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with 38~dB of device gain and…
The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination…
Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so…
We introduce a new method for hardware non-uniform random number generation based on the transfer characteristics of graphene field-effect transistors (GFETs) which requires as few as two transistors and a resistor (or transimpedance…
Enhancing the light-matter interaction in two-dimensional (2D) materials with high-$Q$ resonances in photonic structures has boosted the development of optical and photonic devices. Herein, we intend to build a bridge between the radiation…
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions…
In this paper, we will introduce THz graphene antennas that strongly enhance the emission rate of quantum systems at specific frequencies. The tunability of these antennas can be used to selectively enhance individual spectral features. We…
There is a trade-off between transient performance and line current distortion of the DC bus voltage control of single-phase grid-connected voltage source converters. This paper presents an improved DC bus voltage control scheme of such…
Superconducting parametric amplifiers have great promise for quantum-limited readout of superconducting qubits and detectors. Until recently, most superconducting parametric amplifiers had been based on resonant structures, limiting their…
In this paper, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of…
Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…
We present an impedance engineered Josephson parametric amplifier capable of providing bandwidth beyond the traditional gain-bandwidth product. We achieve this by introducing a positive linear slope in the imaginary component of the input…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
Enhanced optical absorption in two-dimensional (2D) materials has recently moved into the focus of nanophotonics research. In this work, we present a gain-assisted method to achieve critical coupling and demonstrate the maximum absorption…
We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to…
High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…
Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a…