Related papers: Spin Drift in Highly Doped n-type Si
Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
We use high-resolution inelastic neutron scattering to study the low-temperature magnetic excitations of electron-doped superconducting Pr$_{0.88}$LaCe$_{0.12}$CuO$_{4-\delta}$ ($T_c=21\pm 1$ K) over a wide energy range (4…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the…
Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-type Ge has been investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted Hanle signals with features characteristic of spin accumulation…
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…
A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized…
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically…
Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…
A bismuth-doped silicon substrate was analyzed by using a magnetometer based on a superconducting flux qubit. The temperature dependence of the magnetization indicates that the silicon substrate contains at least two signal sources,…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigen-excitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and…
Valley-spin coupling in transition-metal dichalcogenides (TMDs) can result in unusual spin transport behaviors under an external magnetic field. Nonlocal resistance measured from 2D materials such as TMDs via electrical Hanle experiments…