Related papers: Approaching the Trap-Free Limit in Organic Single …
We explore the effect of molecular size on injected carrier transport. We have fabricated and characterized field effect transistors (FETs) on optically transparent single crystals of tetracene, the molecule of which is comprised of four…
The V-based kagome superconductors $A$V$_3$Sb$_5$ ($A$ = K, Rb, and Cs) host charge density wave (CDW) and a topological nontrivial band structure, thereby provide a great platform to study the interplay of superconductivity (SC), CDW,…
Device-based tunnel spectroscopy of superconductors was first performed by Giaever, whose seminal work provided clear evidence for the spectral gap in the density of states (DOS) predicted by the Bardeen-Cooper-Schrieffer (BCS) theory.…
We describe a novel method to measure the surface charge densities on optical fibers placed in the vicinity of a trapped ion, where the ion itself acts as the probe. Surface charges distort the trapping potential, and when the fibers are…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
We have studied the optical conductivity of two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDC) using ab-initio density functional theory (DFT). We find that this class of materials presents large optical response…
Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…
The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully…
The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split…
The electronic properties of heterostructures of atomically-thin van der Waals (vdW) crystals can be modified substantially by Moir\'e superlattice potentials arising from an interlayer twist between crystals. Moir\'e-tuning of the band…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for…
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…
Superatomic crystals are composed of discrete modular clusters that emulate the role of atoms in traditional atomic solids$^{1-4}$. Owing to their unique hierarchical structures, these materials are promising candidates to host exotic…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
Carbon nanotube transistors have been experimentally demonstrated to reach performance comparable and even surpassing that of silicon transistors. Further improvement requires addressing non-idealities arising from device fabrication that…
The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of…
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both…
In many superconducting devices, including qubits, quasiparticle excitations are detrimental. A normal metal ($N$) in contact with a superconductor ($S$) can trap these excitations; therefore such a trap can potentially improve the devices…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…