Related papers: Approaching the Trap-Free Limit in Organic Single …

We measured the optical conductivity of superconducting single crystals of Ba$_{1-x}$K$_{x}$Fe$_{2}$As$_{2}$ with $x$ ranging from 0.40 (optimal doping, $T_c = 39$ K) down to 0.20 (underdoped, $T_c = 16$ K), where a magnetic order coexists…

We investigate the symmetry of the superconducting order parameter in the proximity of a phase-separation or of an incommensurate charge-density-wave instability. The attractive effective interaction at small or intermediate transferred…

The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior.…

We present a combined experimental and theoretical study on the quasi-one-dimensional organic conductor (TMTTF)$_2$PF$_6$, and elucidate the variation of its physical properties under pressure. We fully resolve the crystal structure by…

The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and…

Transport properties are systematically studied for the single crystals Cu$_{x}$TiSe$_{2}$ (0.015$\leq$x$\leq$0.110). Both of in-plane and out-of-plane resistivity show the coexistence of superconducting transition and charge density wave…

Experiments in organic semiconductors (polyacenes) evidence a strong super quadratic increase of the current-voltage (I-V) characteristic at voltages in the transition region between linear (Ohmic) and quadratic (trap free…

FeSe$_{1-x}$Te$_{x}$ superconductors manifest some intriguing electronic properties depending on the value of $x$. In FeSe single crystal, the nematic phase and Dirac band structure have been observed, while topological surface…

We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $\rho^{(d)}(\epsilon,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature…

The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath…

The density of states (DOS) is fundamentally important for understanding physical processes in organic disordered semiconductors, yet hard to determine experimentally. We evaluated the DOS by considering recombination via tail states and…

The direction and impact parameter dependence of electronic stopping power, along with its velocity threshold behavior, is investigated in a prototypical small band gap semiconductor. We calculate the electronic stopping power of H in Ge, a…

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

We have measured the reflectivity spectra of the iron based superconductor LiFeAs (Tc = 17.6 K) in the temperature range from 4 to 300 K. In the superconducting state (T < Tc), the clear opening of the optical absorption gap was observed…

We extend the theory of non-Born effects in resistivity $\rho$ of clean conducting tubes (developed in our previous work arXiv:1810.00426) to ``strips'' -- quasi-one-dimensional structures in 2D conductors. Here also an original Van Hove…

The electronic structures of zig-zag and arm-chair single-walled carbon nanotubes interacting with a transitional-metal atomic nanowire of Ni have been determined. The Ni nanowire creates a large electron density of states (DOS)at the Fermi…

Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows…

A two-band model with repulsive interband coupling and interband {\it transport} (potential) scattering is considered to elucidate their effects on material properties. In agreement with previous work, we find that the bands order…

The in-plane resistivity and out-of-plane resistivity of non-superconducting RBCO (R = Y, Tm) and Fe-doped Bi2212 single crystals are discussed. The comparison of electrical transport properties of the cuprates and quasi-one dimensional…

We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity…