Related papers: Spin-memory effect and negative magnetoresistance …
We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite size calculation of the low frequency optical conductivity. At weak electron-spin coupling spin disorder leads to a…
We show that, due to the weak ferromagnetism of La$_{2-x}$Sr$_x$CuO$_4$, an external magnetic field leads to a dimensional crossover 2D $\to$ 3D for the in-plane transport. The crossover results in an increase of the hole's localization…
We have investigated anomalous Hall effect and magnetoresistance in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$. While the temperature- and magnetic-field-dependent anomalous Hall conductivity is just proportional to the…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
We show that in the metallic phase of a two dimensional electron gas the spin-orbit coupling due to structure inversion asymmetry leads to a characteristic anisotropy in the magnetoconductance. Within the assumption that the metallic phase…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
Transport properties in the Kondo regime of a nanosystem displaying uniaxial magnetic anisotropy (such as a magnetic molecule, magnetic adatom or quantum dot coupled to a localized magnetic moment) are analyzed theoretically. In particular,…
Spin-charge states of correlated electrons in a one-dimensional quantum dot attached to interacting leads are studied in the non-linear transport regime. With non-symmetric tunnel barriers, regions of negative differential conductance…
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar…
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative…
We report a novel singularity in the hysteresis of spin glasses, the reversal-field memory effect, which creates a non-analyticity in the magnetization curves at a particular point related to the history of the sample. The origin of the…
We introduce the notion of inverse effect of magnetostriction for magnetostrictive/piezoelectric heterostructures and study this effect theoretically and experimentally. It is shown that the inverse effect of magnetostriction may crucially…
We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large…
We report on first principles calculations of the anisotropy of the intrinsic spin Hall conductivity (SHC) in nonmagnetic hcp metals and in antiferromagnetic Cr. For most of the metals of this study we find large anisotropies. We derive the…
Theory of spin-charge conversion effects in spintronics are presented in terms of correlation functions of physical observables, spin and electric current. Direct and inverse spin Hall effects and spin pumping effect are studied considering…
We report novel features in the in-plane magnetoresistance (MR) of heavily underdoped YBa_2Cu_3O_{6+x}, which unveil a developed ``charged stripe'' structure in this system. One of the striking features is an anisotropy of the MR with a…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
We analyze transport of magnetization in insulating systems described by a spin Hamiltonian. The magnetization current through a quasi one-dimensional magnetic wire of finite length suspended between two bulk magnets is determined by the…
The existence of conserved spin Hall currents is shown in a strongly correlated system without involving spin-orbit coupling. The spin Hall conductivity is determined by intrinsic bulk properties, which remains finite even when the charge…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…