Related papers: Spin-memory effect and negative magnetoresistance …
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is…
We show that the interplay between charging effects and the non-equilibrium spin accumulation has a dramatic effect in the current through an array of nanostructures attached to ferromagnetic electrodes. Large oscillations in the current as…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We analize electrical conductivity controlled by hopping of bound spin polarons in disordered solids with wide distributions of electron energies and polaron shifts (barriers). By means of percolation theory and Monte Carlo simulations we…
It was experimentally observed that both magnetic anisotropy and spin-orbit interaction strength change when the magnetization of the nanomagnet is reversed. This indicates a variation in spin-orbit interaction strength depending on whether…
We propose that memory effects in the conductivity of metallic systems can be produced by the same two levels systems that are responsible for the 1/f noise. Memory effects are extremely long-lived responses of the conductivity to changes…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather…
Magnetoresistive properties of granular Bi-based HTSC with trapped magnetic fields are investigated in the temperature region near superconducting transition . The effect of trapped field and transport current values and orientations on the…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
Conventional and spin-related thermoelectric effects in electronic transport through a nanoscopic system exhibiting magnetic anisotropy $-$with both uniaxial and transverse components$-$ are studied theoretically in the linear response…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be…
The correlation kinetic equation approach is developed that allows describing spin correlations in a material with hopping transport. The quantum nature of spin is taken into account. The approach is applied to the problem of the bipolaron…
With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring,…
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The…
We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the…
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin-orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of…