Related papers: Spin-memory effect and negative magnetoresistance …
The spin relaxation time of localized charge carriers is few orders of magnitude larger than that of free electrons and holes. Therefore mutual conversion of spin polarization, charge current and spin current turns out to be underlined in…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
We study magnetotransport in conical helimagnet crystals. Spin dependent magnetoresistance exhibits dramatic properties for high and low electron concentrations at different temperatures. For spin up electrons we find negative…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on…
A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two…
The conductance of a point contact between two hopping insulators is expected to be dominated by the individual localized states in its vicinity. Here we study the additional effects due to an external magnetic field. Combined with the…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
We present a new mechanism for a spin blockade effect associated with a change in the type of magnetic anisotropy over oxidation state in a single molecule transistor, by taking an example of an individual Eu$_{2}$(C$_{8}$H$_{8}$)$_{3}$…
A spin current through a ferromagnet/heavy-metal interface may shrink due to the spin-flip at the interface, resulting in the spin-memory loss. Here we propose a mechanism of the spin-memory loss. In contrast to other mechanisms based on…
The magnetic spin Hall effect is a time-reversal-odd phenomenon in which spin current is induced by the charge current. In the presence of a spin-orbit coupling and/or noncolinear magnetism, however, spin current is not uniquely defined.…
During the study of magnetoresistivity in La(1-x)Ca(x)MnO(3) it was found that after cycling of the magnetic field, some kind of magnetic field memory effect was observed. For La0.5Ca0.5MnO3 after cycling of the magnetic field to 13T and…
We investigate the combined effects of magnetic impurities and applied magnetic field on the interference contribution to the conductance of disordered metals. We show that in a metal with weak spin-orbit interaction, the polarization of…
Weak localization corrections to conductivity of ferromagnetic systems are studied theoretically in the case when spin-orbit interaction plays a significant role. Two cases are analyzed in detail: (i) the case when the spin-orbit…
It is shown that under appropriate conditions spin-transfer-driven magnetization dynamics in a single-domain nanomagnet is conservative in nature and admits a specific integral of motion, which is reduced to the usual magnetic energy when…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We report results demonstrating a singularity in the hysteresis of magnetic materials, the reversal-field memory effect. This effect creates a nonanalyticity in the magnetization curves at a particular point related to the history of the…
We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and…
We analyze the weak localization correction to the conductivity of a spinless two-leg ladder model in the limit of strong dephasing \tau_\phi << \tau_tr, paying particular attention to the presence of a magnetic field, which leads to an…
The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective…