Related papers: Multiprobe quantum spin Hall bars
The time-dependent transport through single-molecule magnets coupled to magnetic or non-magnetic electrodes is studied in the framework of the generalized master equation method. We investigate the transient regime induced by the periodic…
We consider a single electron traveling along a strictly one-dimensional quantum wire interacting with another electron in a quantum ring capacitively coupled to the wire. We develop an exact numerical method for treating the scattering…
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently…
In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a ferrimagnetic insulator, yttrium-iron-garnet. Hall…
Recently we wrote a paper on the theory of the quantum spin Hall effect(QSHE) in two dimensional(2D) topological insulators(TIs)1 which have been considered as do not add much new insight to the exhaustively studied topic of TI within a…
Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respectively. Here, we report the observation of QSH edge…
We investigate the origin of the resistance fluctuations of mesoscopic samples, near transitions between Quantum Hall plateaus. These fluctuations have been recently observed experimentally by E. Peled et al. [Phys. Rev. Lett. 90, 246802…
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…
In the framework of the edge-channel picture and the scattering approach to conduction, we discuss the low frequency admittance of quantized Hall samples up to second order in frequency. The first-order term gives the leading order…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a…
Drude weight, historically associated with the longitudinal Drude conductivity, can be generalized to describe the transverse or Hall component of the extrinsic conductivity tensor. In particular, transverse Drude weights, such as band…
We study theoretically the manifestation of the spin-Hall effect in a two-dimensional electronic system with Rashba spin-orbit coupling via dc-transport measurements in realistic mesoscopic H-shape structures. The Landauer-Buttiker…
Current statistics of an antidot in the fractional quantum Hall regime is studied for Laughlin's series. The chiral Luttinger liquid picture of edge states with a renormalized interaction exponent $g$ is adopted. Several peculiar features…
We investigate the transport properties of quantum dots placed in strong magnetic field using a quantum-mechanical ' approach based on the 2D tight-binding Hamiltonian with direct Coulomb interaction and the Landauer-B\"{u}ttiker (LB)…
Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition…
We use an atomic force microscope tip as a local gate to study the scattering between edge channels in a 2D electron gas in the quantum Hall regime. The scattering is dominated by individual, microscopic scattering centers, which we…
Constrictions in fractional quantum Hall (FQH) systems not only facilitate backscattering between counter-propagating edge modes, but also may reduce the constriction filling fraction $\nu_c$ with respect to the bulk filling fraction…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
The quantum spin Hall (QSH) states discovered in an inverted band of InAs/GaSb and HgTe/CdTe quantum wells categorize them among the very superior candidates for topological insulators. In the presence of a magnetic field, these QSH states…