Related papers: Anisotropic g factor in InAs self-assembled quantu…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
We theoretically consider g factor and spin lifetimes of holes in a longitudinal Ge/Si core/shell nanowire quantum dot that is exposed to external magnetic and electric fields. For the ground states, we find a large anisotropy of the g…
In a 2D electron system in (001) GaAs/AlGaAs upon filling high Landau levels, it was recently observed a new class of collective states, which are recognized now to relate to the spontaneous formation of a charge density wave (``stripe…
A graphene quantum dot under intense ac field and static low magnetic field is investigated. From a tight-binding perspective, applying a Fourier-Floquet transformation and renormalization process, we observe that graphene -intrinsically…
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up…
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p…
Using the Nikiforov-Uvarov (NU) method, the energy levels and the wave functions of an electron confined in a two-dimensional (2D) pseudoharmonic quantum dot are calculated under the influence of temperature and an external magnetic field…
We use the two-pulse spin-dependent photon echo technique to study the in-plane hole spin anisotropy in a 20~nm-thick CdTe/Cd$_{0.76}$Mg$_{0.24}$Te single quantum well by exciting the donor-bound exciton resonance. We take advantage of the…
Extending a previous work on spin precession in GaAs/AlGaAs quantum dots with spin-orbit coupling, we study the role of deformation in the external confinement. Small elliptical deformations are enough to alter the precessional…
One-dimensional (1D) hole gas confined in a cylindrical Ge nanowire has potential applications in quantum information technologies. Here, we analytically study the low-energy properties of this 1D hole gas. The subbands of the hole gas are…
We determine the effective $g$-factor ($|g^\ast|$) of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of a 2DEG in an InAs/AlGaSb quantum well measured in an…
Nanowire double quantum dots occupied by an even number of electrons are investigated in the context of energy level structure revealed by electric dipole spin resonance measurements. We use numerically exact configuration interaction…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…
We report studies of $k$-dependent Land\'e $g$-factor, performed by both continuous media approximation k.p method, and atomistic tight-binding sp$^3$d$^5$s$^*$ approach. We propose an effective, mesoscopic model for InAs that we are able…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and…
We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent…
We report on the theoretical study of the hole states in II-IV quantum dots of a spherical and ellipsoidal shape, described by a smooth potential confinement profiles, that can be modelled by a Gaussian functions in all three dimensions.…