Related papers: Anisotropic g factor in InAs self-assembled quantu…
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a…
We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field…
We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced…
We study the system consisted of two electrons in a quantum dot with a three-dimensional harmonic confinement potential under the effect of a magnetic field. Specifically, two different confinement conditions are considered, one isotropic…
A five-level {\Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic…
The Lande g-factors for CdSe quantum dots and rods are investigated within the framework of the semiempirical tight-binding method. We describe methods for treating both the n-doped and neutral nanostructures, and then apply these to a…
We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated…
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have…
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large…
The electron Land\'e g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via…
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier…
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental…
The microscopic wave functions of the composite fermion theory can incorporate electron mass anisotropy by a trivial rescaling of the coordinates. These wave functions are very likely adiabatically connected to the actual wave functions of…
We study the Land\'e $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration…
Optical studies of a bright exciton provide only limited information about the hole anisotropy in a quantum dot. In this work we present a universal method to study heavy hole anisotropy using a dark exciton in a moderate in-plane magnetic…
In this dissertation we use sophisticated numerical methods in order to examine ground-state (GS) properties of two types of quantum systems with electron electron interactions: A quantum dot (QD) and a nano-wire. In the first half of the…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a…