Related papers: Coulomb gap refrigerator
We analyze the effect of electron-electron interactions on Andreev current and shot noise in diffusive hybrid structures composed of a normal metal attached to a superconductor via a weakly transmitting interface. We demonstrate that at…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
By a polaronic energy shift, the effective charging energy of molecules can become negative, favoring ground states with even numbers of electrons. Here, we show that charge transport through such molecules near ground-state degeneracies is…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
Characterization of the structural and electron transport properties of single chiral molecules provides critical insights into the interplay between their electronic structure and electrochemical environments, providing broader…
We investigate theoretically the simultaneous tunneling of two electrons from a superconductor into a normal metal at low temperatures and voltages. Such an emission process is shown to be equivalent to the Andreev reflection of an incident…
Cooling nanoelectronic devices below 10 mK is a great challenge since thermal conductivities become very small, thus creating a pronounced sensitivity to heat leaks. Here, we overcome these difficulties by using adiabatic demagnetization of…
We have measured current-voltage characteristics of two-dimensional arrays of small tunnel junctions at temperatures from 1.5 K to 4.2 K. This corresponds to thermal energies larger than the charging energy. We show that 2D-arrays can be…
We calculate the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy $E_c$ between two electrons with opposite…
It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…
We consider a system of two-dimensional electrons strongly localized by disorder. Interactions create a gap in the average tunneling density of states $\nu(E)$ at energies, E, close to the Fermi level. We derive a system of self-consistent…
We analyze electron transport through relatively short coherent conductors in the presence of Coulomb interaction. We evaluate the current-voltage characteristics of such conductors taking into account the effect of an external environment.…
In the ring-shaped tunnel-junction array with four islands, the secondary Coulomb blockade gap in a low bias-voltage range is observed in the I-V characteristics. We attribute its appearance to the unique topology of the array which induces…
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
We analyze cotunneling transport through two quantum dots in series weakly coupled to external ferromagnetic leads. In the Coulomb blockade regime the electric current flows due to third-order tunneling, while the second-order…
A solid-state cooling principle based on magnetic-field-driven tunable suppression of Andreev reflection in superconductor/two-dimensional electron gas nanostructures is proposed. This cooling mechanism can lead to very large heat fluxes…
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a…
We present a first-principles method for calculating the charging energy of a molecular single-electron transistor operating in the Coulomb blockade regime. The properties of the molecule are modeled using density-functional theory, the…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…