Related papers: Coulomb gap refrigerator
In this article we review the thermoelectric properties of three terminal devices with Coulomb coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs one of which can…
We investigate heat and charge transport in NN'IS tunnel junctions in the diffusive limit. Here N and S are massive normal and superconducting electrodes (reservoirs), N' is a normal metal strip, and I is an insulator. The flow of electric…
We study the interplay between Coulomb blockade and superconductivity in a tunable superconductor-superconductor-normal metal single-electron transistor. The device is realized by connecting the superconducting island via an oxide barrier…
In this paper I study the posibility of inducing a single-electron current by rotating a non-magnetic conducting rod with a small tunnel junction immerse in a uniform magnetic field perpendicular to the plane of motion. I show first, by…
Employing Coulomb-coupled systems, we demonstrate a cryogenic non-local refrigeration engine, that circumvents the need for a change in the energy resolved system-to-reservoir coupling, demanded by the recently proposed non-local…
The problem of electron transport by means of a dumbbell shaped shuttle in strong Coulomb blockade regime is solved. The electrons may be shuttled only in the cotunneling regime during the time spans when both shoulders of the shuttle…
We study the transport through two impurities or ``barriers'' in a one-dimensional quantum wire, taking into account the long-range $\frac1r$ Coulomb interactions. We compute the temperature-dependent conductance $G(T)$ of this system.…
Coulomb blockade thermometers (CBTs) are versatile and, in principle, primary thermometers operating down to the micro-Kelvin range but bias heating spoils the thermometry and the primary mode. Here, we introduce a method to extract the CBT…
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the…
A current due to a tunneling event that involves three times the charge of an electron was observed in the current - voltage characteristics of a superconducting single-electron tunneling transistor. In this tunnel event, a Cooper pair…
A small scale bipolar transistor with polysilicon emitter will, depending on the emitter window size, display suppression of the hole tramsport due to single electron effects. In this paper the resulting base current suppression is computed…
We study the thermoelectric transport of a small metallic island weakly coupled to two electrodes by tunnel junctions. In the Coulomb blockade regime, in the case when the ground state of the system corresponds to an even number of…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…
We study strong tunneling (i.e. transmission $h/e^2R_T \gg 1$) in the single-electron box with many transverse modes at zero temperature. We develop a new renormalization group method which includes all charge states and requires no initial…
In mesoscopic and nanoscale systems at low temperatures, charge carriers are typically not in thermal equilibrium with the surrounding lattice. The resulting, non-equilibrium dynamics of electrons has only begun to be explored.…
The design and operation of an electronic cooler based on a combination of superconducting tunnel junctions is described. The cascade extraction of hot-quasiparticles, which stems from the energy gaps of two different superconductors,…
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…