Related papers: Low Frequency Electronic Noise in Single-Layer MoS…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
LED degradation is usually associated with defects in the active region. Whereby the noise analysis can be a strong instrument to reveal them. The results of optical noise measurements for commercially available blue LED samples in a wide…
Hg$_{1-x}$Cd$_x$Te is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. This makes Hg$_{1-x}$Cd$_x$Te one of the key materials for…
We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity.…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of semiconductors…
Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…
Fluctuating electric fields emanating from surfaces are a primary source of decoherence in trapped ion qubits. Here, we show that superradiant phonon-induced excitation exchange between adatoms can lead to a reduction of electric field…
It is shown, with citing tunnel junction as an example, that mutual interplay of electron quantum transfers in a conducting system can be the fast mechanism for generation fundamental low-frequency flicker conductance fluctuations (1/f…
The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…
The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…
In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We…
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…
The low-frequency noise (LF-noise) of deep submicron MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical…