The low-frequency noise (LF-noise) of deep submicron MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics-based parameters which cause statistical fluctuations in LF-noise behavior of individual devices. It can easily be implemented in a compact model for use in circuit simulation tools.
@article{arxiv.cond-mat/0409030,
title = {Modelling of Statistical Low-Frequency Noise of Deep-Submicron MOSFETs},
author = {Gilson I Wirth and Jeongwook Koh and Roberto da Silva and Roland Thewes and Ralf Brederlow},
journal= {arXiv preprint arXiv:cond-mat/0409030},
year = {2009}
}