Related papers: Modelling of Statistical Low-Frequency Noise of De…
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…
LED degradation is usually associated with defects in the active region. Whereby the noise analysis can be a strong instrument to reveal them. The results of optical noise measurements for commercially available blue LED samples in a wide…
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…
A new mechanism of low frequency (1/f-like) noise generation is described and analyzed. It is attributed to higher frequency asymmetric resonance modes, which are stimulated by a random factor, e.g. due to thermal excitation.…
Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS$_2$ and graphene membranes, used for both sensing and component-oriented applications.…
We present the theoretical analysis of steady state regimes and low-frequency noises in quasi-ballistic FETs. The noise analysis is based on the Langevin approach, which accounts for the microscopic sources of fluctuations originated from…
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by…
Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition.…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
We study the dynamics of dephasing in a quantum two-level system by modeling both 1/f and high-frequency noise by random telegraph processes. Our approach is based on a so-called spin-fluctuator model in which a noisy environment is modeled…
This report is aimed at reviving the explanation of flicker-noise observations as the result of spectral measurement of very low-frequency but stationary narrow-band fluctuations named as infralow-frequency noise (ILF noise) [A. Ya.…
A general method for directly measuring the low-frequency flux noise (below 10 Hz) in compound Josephson junction superconducting flux qubits has been used to study a series of 85 devices of varying design. The variation in flux noise…
The resolution of low-frequency resistance noise measurements can be increased by amplitude modulation, shifting the spectrum of the resistance fluctuations away from the 1/f noise contributed by measurement instruments. However, commercial…
We report a direct measurement of the low-frequency noise spectrum in a superconducting flux qubit. Our method uses the noise sensitivity of a free-induction Ramsey interference experiment, comprising free evolution in the presence of noise…
Low-frequency $1/f^{\gamma}$ noise is ubiquitous, even in high-end electronic devices. For qubits such noise results in decrease of their coherence times. Recently, it was found that adsorbed O$_2$ molecules provide the dominant…
For the generation of static magnetic fields solenoids are frequently used for the purpose of research and development of magnetic field sensors. When such a sensor is to be analyzed with regard to its inherent noise the influence of other…
We present an analytical calculation of the response of a driven Duffing oscillator to low-frequency fluctuations in the resonance frequency and damping. We find that fluctuations in these parameters manifest themselves distinctively,…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
This paper presents a detailed noise analysis and a noise-based optimization procedure for resonant MEMS structures. A design for high sensitivity of MEMS structures needs to take into account the noise shaping induced by damping phenomena…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…